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Manufacturer: Polyfet RF Devices. Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?. 7 Results. Datasheet: 173Kb/7P. Manufacturer: Integrated Technology Future.
Equivalent. Type Designator: TPCA8019-H. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 30 V. Maximum Gate-Source Voltage |Vgs|: 20 V. Maximum Drain Current |Id|: 45 A. Maximum Junction Temperature (Tj): 150 °C.
TT2190 (BR3DA2190F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features (V =1500V) MBIT CBOHigh Speed, high breakdown voltage (VCBO=1500V),high reliability (Adoption of HVP process. 0.1. Size:29K sanyo. tt2190ls.pdf.
NPN RF POWER TRANSISTOR HF220-50 146Kb / 2P: NPN SILICON RF POWER TRANSISTOR Fairchild Semiconductor: IRF220-223 165Kb / 5P: N-Channel Power MOSFETs, 7A, 150-200V Pepperl+Fuchs Inc. OHV200-F220-B15 212Kb / 2P: Handheld reader Microchip Technology: PIC10F220-EMC 970Kb / 86P: High-Performance Microcontrollers with 8-bit A/D
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 15.5 nC (typ.)
Part # YX8019: Download YX8019 Download: File Size 1356.76 Kbytes: Page 1 Pages : Manufacturer: SHININGIC [Shanghai Yuxin Electronic Technology Co., Ltd] Direct Link
Transistor Mosfet Canal N. Voltaje Drain - Source (VDSS): 100V. Voltaje Drain - Gate (VDGR): 100V. Voltaje Gate - Source (VGS): ± 20V. Corriente Drain (ID): 80A. Corriente Pulsada en Drain (IDM): 320A. Resistencia de Conducción (RDS): 0.015 Ω. Potencia Máxima Disipada (PD): 260W. Hoja Técnica IRF8010. Añadir al carrito.
