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Simon Min Sze, or Shi Min (Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
7 de nov. de 2023 · Simon M. Sze. March 21, 1936 - November 6, 2023. Dr. Simon Sze, a visionary in the field of semiconductor physics and technology, and a renowned educator, passed away peacefully on November...
8 de nov. de 2023 · Dr. Simon Min Sze, a semiconductor physics visionary most notable for his contributions to the invention of the world's first floating-gate metal-oxide-semiconductor field-effect transistor...
Simon Min Sze o Shi Min (chino: 施敏; pinyin: Shī Mǐn; 21 de marzo de 1936 - 6 de noviembre de 2023), fue un ingeniero eléctrico taiwanés-estadounidense. Es mejor conocido por inventar el MOSFET de puerta flotante con el ingeniero eléctrico coreano Dawon Kahng en 1967. Vida temprana y educación.
Dr. Simon M. Sze was born in Nanking, China in 1936. He received the B. S. degree from the National Taiwan University in 1957, M. S. from the University of Washington in 1960, and Ph. D. from Stanford University in 1963, all in Electrical Engineering. Dr. Sze was with Bell Laboratories in Murray Hill, N. J., from 1963 to 1989 as a member of the ...
Electronic ISSN: 2832-7691. Print ISSN: 2832-7683. INSPEC Accession Number: Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=10035030. More » Publisher: IEEE. Recounts the career and contributions of Simon Sze.
Prof. Simon Sze has made pioneering contributions to inter-metal/semiconductor carrier transports for semiconductor devices, including both analytical and experimental investigations to Ohmic and Schottky contact behaviors over extensive doping (10 14-10 20 /cm 3) and operating temperature ranges (Si: 77K-373K; GaAs: 50K-500K) by simultaneously ...
