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5 de jul. de 2022 · This technical paper demonstrates the influence of the probe-tip surface smoothness of a bipolar electrostatic chuck (ESC) on electrostatic force. ESC, which has a silicon-based beam-array microstructure, aims to pick and place a dielectric object with a curved surface owing to the compliance of its elastically deformable beams. The ESC was fabricated using a lithography technique ...
not be able to be removed completely. When chuck pins move up as wafer sticking occurs, the wafer position is shifted and defined as dynamic alignment (DA) offset, as Fig. 1. Schematic comparison of monopolar ESC and bipolar ESC. Fig. 2. (Color online) Dechucking operation sequence of bipolar ESC. E-mail address: cslai@mail.cgu.edu.tw
The figure illustrates a bipolar chuck for which the above V would be half of the voltage between electrodes A and B; for symmetric electrodes V = [ -VA + VB] / 2. The substrate potential is centered at the average potential, VS = [VA + VB] / 2. The above assumes little dielectric conduction; the “Coulombic” mode.
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1 de feb. de 2014 · Electrostatic chuck (ESC) is one of the key components in IC manufacturing process, which applies the principle of electrostatic adsorption to clamp the wafer on its surface. In such a system ...
The geo-metrical contact area of ESC is 60% of the projected area of chuck electrode, owing to a number of emboss (height. 051-1. c 2008 The Japan Society of Plasma Science and Nuclear Fusion Research. Fig. 3 Initial chuck current decay of J-R chuck. Fig. 4 The total charge Q0 as a function of the voltage V0 applied to J-R chuck.
3 de mar. de 2017 · Coulomb-type bipolar electrostatic chuck in working state, as shown in Figure 5. Note that the resistance of the wafer is negligible because the resistivity of silicon wafer, ranging from 2 to 50 cm, is small enough compared with that of the dielectric layer (typically,
