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  1. Equivalente. Reemplazo. Hoja de especificaciones. Principales características. Número de Parte: A1941. Material: Si. Polaridad de transistor: PNP.

  2. Type Designator: A1941. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 100 W. Maximum Collector-Base Voltage |Vcb|: 160 V. Maximum Collector-Emitter Voltage |Vce|: 160 V. Maximum Emitter-Base Voltage |Veb|: 5 V.

  3. Part #: 2SA1941. Download. File Size: 147Kbytes. Page: 2 Pages. Description: TRANSISTOR (POWER AMPLIFIER APPLICATIONS). Manufacturer: Toshiba Semiconductor.

  4. 2SA1941. TOSHIBA Transistor Silicon PNP Triple Diffused Type. 2SA1941. Power Amplifier Applications. Unit: mm. High breakdown voltage: VCEO = −140 V (min) Complementary to 2SC5198. Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) JEDEC ―. JEITA ―. TOSHIBA 2-16C1A.

  5. Product detail. 2SA1941. Power transistor for high-speed switching applications. Purchase. Inquiry. Parametric search. ALL Data sheet Application Note Other. PREV. Data sheet. 2SA1941 Data sheet/Japanese [Nov,2013] PDF: 253KB. Data sheet. 2SA1941 Data sheet/English [Nov,2013] PDF: 158KB. Reliability Information.

  6. Hace 4 días · Description: Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W. Lifecycle: New Product: New from this manufacturer. Datasheet: 2SA1941-O (Q) Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. More Information. Learn more about Toshiba 2SA1941-O (Q)

  7. Part #: 2SA1941. Datasheet: 147Kb/2P. Manufacturer: Toshiba Semiconductor. Description: TRANSISTOR (POWER AMPLIFIER APPLICATIONS). 20 Results. Datasheet: 938Kb/6P. Manufacturer: Foshan Blue Rocket Electronics Co.,Ltd..

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