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A1941 Datasheet, Equivalent, Cross Reference Search. Type Designator: A1941. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 100 W. Maximum Collector-Base Voltage |Vcb|: 160 V.
Principales características. Número de Parte: A1941. Material: Si. Polaridad de transistor: PNP. ESPECIFICACIONES MÁXIMAS. Disipación total del dispositivo (Pc): 100 W. Tensión colector-base (Vcb): 160 V. Tensión colector-emisor (Vce): 160 V. Tensión emisor-base (Veb): 5 V. Corriente del colector DC máxima (Ic): 10 A.
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1 de nov. de 2013 · TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
Part #: 2SA1941. Download. File Size: 147Kbytes. Page: 2 Pages. Description: TRANSISTOR (POWER AMPLIFIER APPLICATIONS). Manufacturer: Toshiba Semiconductor.
Bipolar Transistors, PNP Bipolar Transistor, -140 V, -10 A, TO-3P (N)|Find data sheet and product information.
Búsqueda de la descripción y la hoja de especificaciones del transistor A1941. BJT: 2SA1941 TO3PN 2SA1941B TO3P 2SA1941O TO3PI 2SA1941R TO3PI 2SA1941T6TL TO3PI 3CA1941 TO3P A1941 TO-3PN MOSFET: