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description: patented gold metalized silicon gate enhancement mode rf power vdmos transistor?. 7 results. Datasheet: 173Kb/7P. Manufacturer: Integrated Technology Future.
Datasheet pdf. Equivalent. Type Designator: TPCA8019-H. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 30 V. Maximum Gate-Source Voltage |Vgs|: 20 V.
NPN RF POWER TRANSISTOR HF220-50 146Kb / 2P: NPN SILICON RF POWER TRANSISTOR Fairchild Semiconductor: IRF220-223 165Kb / 5P: N-Channel Power MOSFETs, 7A, 150-200V Pepperl+Fuchs Inc. OHV200-F220-B15 212Kb / 2P: Handheld reader Microchip Technology: PIC10F220-EMC 970Kb / 86P: High-Performance Microcontrollers with 8-bit A/D
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 15.5 nC (typ.)
Part # YX8019: Download YX8019 Download: File Size 1356.76 Kbytes: Page 1 Pages : Manufacturer: SHININGIC [Shanghai Yuxin Electronic Technology Co., Ltd] Direct Link
La selección de algunos parámetros de transistores bipolares. Equivalente de la búsqueda. Material = Struct = Pc > W Vcb > V Vce > V Veb > V Ic > A Tj > C Ft > MHz Cc pF Hfe > Caps = + equivalente . R1 = kOhm R2 = kOhm R1/R2 = Los campos en blanco o nulo no se tienen en ...
El 120N08 es un transistor de efecto de campo MOS de canal N diseñado para aplicaciones de conmutación de alta corriente. La capacidad robusta de EAS y el RDS (ON) ultra bajo son adecuados para PWM, conmutación de carga, especialmente para aplicaciones de controlador de E-Bike.
